A successful observation and analysis of the Zeeman effect on the λ ≈ 1.54µm photoluminescence band in Er-doped crystalline molecular beam epitaxially grown Si were presented. The symmetry of the dominant optically active centers was conclusively established as orthorhombic I(C2v) with g|| ≈ 18.39 and g ≈ 0. In this way the long standing puzzle as regards the paramagnetism of optically active Er-related centers in Si was settled. Preferential generation of a single type of an optically active Er-related center confirmed in this study was essential for photonic applications of Si:Er.

Microscopic Structure of Er-Related Optically Active Centers in Crystalline Silicon. N.Q.Vinh, H.Przybylińska, Z.F.Krasilnik, T.Gregorkiewicz: Physical Review Letters, 2003, 90[6], 066401 (4pp)