The electrical activity of Cs-H defects in Si was investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique was used to measure the stress-energy tensor and the results were compared with theoretical modeling. At low temperatures, implanted H was trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the C impurity and the donor level falls, crossing the gap. At the same time, an acceptor level was introduced into the upper gap making the defect a positive-U center.

Electrical Activity of Carbon-Hydrogen Centers in Si. O.Andersen, A.R.Peaker, L.Dobaczewski, K.Bonde Nielsen, B.Hourahine, R.Jones, P.R.Briddon, S.Öberg: Physical Review B, 2002, 66[23], 235205 (8pp)