Complexes of H and Pt, especially the PtH3 and PtH4 complexes in Si, were studied via measurements of their optical absorption at 5K and by electron-spin resonance below 10K. Float-zone Si was separately doped with Pt and H, with heating at 1000 to 1360C followed by quenching in water. In the case of high-purity n-type specimens with a lower concentration of Pt than of H, optical-absorption peaks at 1909.1, 1910.3 and 1930.4/cm were observed in addition to the peaks due to the PtH and PtH2 complexes. Furthermore, 2 strong peaks were observed at about 1898.5 and 1921.9/cm; especially in n-type specimens. Based upon the results of annealing, the dependences of peaks upon the position of the Fermi level, peak splitting by co-doping of H and D and photo-electron spin resonance measurements, the peaks observed at 1910.3 and 1930.4/cm were attributed to the PtH3 complex with a neutral charge state and those observed at about 1898.5 and 1921.9/cm were attributed to the PtH3 complex with a negative charge state. The peak observed at 1909.1/cm was also attributed to the PtH4 complex.

Complexes of Platinum and Hydrogen in Silicon Observed by Optical Absorption and Electron Spin Resonance. N.Fukata, T.Mchedlidze, M.Suezawa, K.Saito, A.Kasuya: Physical Review B, 2002, 66[23], 235209 (11pp)