The irradiation damage produced in Si crystals by 0.7 and 0.4MeV per atom Sin (n = 1 to 3) were measured. The results of the measurements showed that the relationship between the defect concentrations and the cluster sizes was non-linear; and that the ratio of the defect concentration induced by clusters, to that by single atoms, increased with a decrease in the energy per atom for given-sized clusters. The experimental results could be well explained by the cooperation of the electronic and nuclear stopping processes.

Non-Linear Characteristics of Irradiation Damage in Silicon by MeV Si Clusters. D.Y.Shen, D.X.Jiang, X.T.Lu, Y.X.Shen, X.M.Wang, Z.H.Xia, Q.Zhao, Z.Zhang: Applied Surface Science, 2002, 199[1-4], 123-7