Reverse- and zero-bias annealing kinetics of Au-related deep levels in Au diffused P-doped Si hydrogenated by wet chemical etching, were determined. The dynamic behavior of these deep levels could enable an estimation of the number of H atoms in the defects. Differences in the dynamic behavior during both reverse- and zero-bias annealing supported the suggestion that Au and H formed at least 2 different electrically active complexes (AuH and AuH2) in n-type Si.

Formation and Passivation Kinetics of Gold-Hydrogen Complexes in n-Type Silicon. A.Zamouche: Journal of Applied Physics, 2003, 93[1], 753-5