The ion mass effect on the dominating vacancy related deep levels in Cz-Si implanted with 4MeV C ions and 6MeV Si ions was investigated by deep-level transient spectroscopy. It was found that the intensity of the deep-level transient spectroscopy signal for the doubly negative charge state of the divacancy [V2=/-] deviates from a one-to-one correlation with that of the singly negative charge state of the divacancy [V2-/0] and decreased, compared to V2-/0, with increasing ion mass. Capture kinetics studies reveal that the electron-capture rate for V2=/- decreased with increasing ion mass, while that for V2-/0 has a weaker dependence on ion mass. A model was suggested here to explain most of the known experimental observations of the ion mass effect for V2=/-. The model assumes a local compensation of the carrier concentration in highly disordered regions located within the collision cascades. In addition, it was observed that the deep-level transient spectroscopy signal of the vacancy-O pair exhibited a trend similar to that for V2=/- regarding the ion mass effect.

Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation. E.V.Monakhov, J.Wong-Leung, A.Y.Kuznetsov, C.Jagadish, B.G.Svensson: Physical Review B, 2002, 65[24], 245201 (9pp)