High-resolution Laplace deep-level transient spectroscopy and conventional deep level transient spectroscopy were applied to Si implanted with very low doses of Si, Ge, Er or Yb, and the results were compared with those for electron-irradiated Si. The deep-level transient spectra of all of the samples initially looked very similar, and a peak at 95K appeared in all of the spectra; due possibly to the vacancy-O (VO) defect. Detailed measurements were made of the capture cross-section and activation energy of this defect using Laplace deep level transient spectroscopy. It was shown that, when the mass of the implanted ion exceeded that of Si, the defect had a much smaller electron capture cross-section than that expected for the VO defect, and a smaller activation energy. Hydrogen was introduced, by wet chemical processing or plasma, into all samples in order to observe the H–VO interactions resulting in VOH. By using high-resolution deep-level transient spectroscopy, it was possible to establish that, after hydrogenation, the VOH defect existed with an identical emission rate in Si-implanted Si and electron-irradiated Si, but not in Si implanted with heavier ions. It was concluded that the peak at 95K in the deep level transient spectra, in the case of the heavier ions, was due to a different defect; thus confirming published reports. This defect was negatively charged, unlike VO; which was acceptor-like. It was also possible to observe VOH in samples where VO was not present, when these samples were annealed. This was attributed to the release of V and H atoms from other defects during annealing.

High Resolution Deep Level Transient Spectroscopy Studies of the Vacancy-Oxygen and Related Defects in Ion-Implanted Silicon. J.H.Evans-Freeman, P.Y.Y.Kan, N.Abdelgader: Journal of Applied Physics, 2002, 92[7], 3755-60