The annealing kinetics (410–450K) of Au–H complexes in n-type Si Au-diffused and hydrogenated by wet chemical etching were studied using deep-level transient spectroscopy and capacitance–voltage techniques. The results showed that there were at least two different electrically active Au–H complexes. These complexes behavior which depended upon bias applied during the annealing was closely related to H concentration. The observations were illustrated by a phenomenological model taking into account the effect of availability of H in the samples.

On the Electrically Active Gold–Hydrogen Complexes in n-Si. A.Zamouche: Materials Science and Engineering B, 2002, 95[2], 95-9