Oxidation-induced stacking faults and related grown-in O precipitates were investigated in N-doped Czochralski Si. The samples were oxidized at 1150C, or were annealed under various conditions. It was found that oxidation-induced stacking faults with different densities in the N-doped Czochralski Si distributed not only in the oxidation-induced stacking fault ring region, but also in the inner region of the ring. Furthermore, the oxidation-induced stacking fault ring was extended by N doping. In addition, the investigation of O precipitates indicated that N changes the size and density distribution of grown-in O precipitates in the oxidation-induced stacking fault ring and void regions of the N-doped Czochralski Si during crystal growth, and therefore the oxidation-induced stacking fault behaviour was changed. Based upon the experimental facts, the mechanism affecting the distribution of oxidation-induced stacking faults in different regions was considered.

Oxidation-Induced Stacking Faults and Related Grown-In Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon. X.Yu, D.Yang, X.Ma, Y.Shen, D.Tian, L.Li, D.Que: Semiconductor Science and Technology, 2003, 18[4], 393-7