Investigations were made of the dynamics of surface dislocation ensembles in Si under conditions of mechanical and magnetic perturbations. The motion of defects was described with due regard for barriers of 3 types, including magnetically sensitive point defects and dislocations. Within the concept of spin-dependent reactions between structural defects, a kinetic model was proposed for the magnetic-field-stimulated changes observed in the dislocation mobility due to the formation of long-lived complexes involving paramagnetic impurities. It was experimentally proved that the preliminary treatment of dislocation-containing crystals in a magnetic field (B = 1T) for 300s to 0.75h led to an increase in the velocity of dislocations in n-Si and p-Si samples by factors of 2 and 3, respectively. The magnetic memory effect was observed in dislocation-containing Si crystals. Consideration was given to the decay kinetics of the magnetic memory during storage of the Si samples under natural conditions after magnetic treatment. The basic quantitative characteristics of the motion of linear defects in a magnetic field (for example, the partial velocities of dislocations, the dynamics of dislocation segments at stoppers of different types, and the expectation times for the appearance of the appropriate stoppers) were determined by fitting the experimental data to theoretical results.

Dynamics of Surface Dislocation Ensembles in Silicon under Conditions of Mechanical and Magnetic Perturbations. A.M.Orlov, A.A.Skvortsov, A.A.Solovev: Physics of the Solid State, 2003, 45[4], 643-8