The origin and atomic structure of C-defect on Si(100) were unambiguously identified. Two pairs of enantiomorphic protrusions of C-defect were observed by low-temperature scanning tunneling microscopy. These were attributed to the dissociative adsorption of a single water molecule on 2 adjacent dimers. Two unreacted dangling bonds on these

 
dimers had different electronic states which were visualized in unoccupied state scanning tunnelling microscopic images.

Model for C Defect on Si(100) - the Dissociative Adsorption of a Single Water Molecule on Two Adjacent Dimers. M.Z.Hossain, Y.Yamashita, K.Mukai, J.Yoshinobu: Physical Review B, 2003, 67[15], 153307 (4pp)