X-ray diffraction was used to probe interdiffusion in asymmetrically strained, low concentration Si/SiGe superlattices. The results were shown to be in good agreement with a model developed from literature data for Ge diffusion in SiGe alloys. Using this model,

it was shown that the initial fast interdiffusion frequently observed in Si/SiGe superlattices results primarily from the concentration dependence of the activation enthalpy for SiGe interdiffusion. Time dependent strain relaxation was shown to play a discernible, but secondary role in the transition from fast to slow interdiffusion. The linear proportionality constant relating the activation enthalpy of SiGe interdiffusion to biaxial strain was found to be ~19eV/unit strain.

Observation and Modeling of the Initial Fast Interdiffusion Regime in Si/SiGe Multilayers. D.B.Aubertine, M.A.Mander, N.Ozguven, A.F.Marshall, P.C.McIntyre, J.O.Chu, P.M.Mooney: Journal of Applied Physics, 2002, 92[9], 5027-35