Two-level charge pumping measurements were used to study a single trap situated at the SiO2/Si interface of sub-100nm metal–oxide–semiconductor transistors. It was shown that an Arrhenius plot of the emission time-constant versus temperature permitted the determination of the capture cross-section and energy position of the trap within the Si band gap. The single trap was shown to be the well-known donor Pb0 center (dangling bond) at the SiO2/Si(100) interface.

Study of a Single Dangling Bond at the SiO2/Si Interface in Deep Submicron Metal–Oxide–Semiconductor Transistors. L.Militaru, A.Souifi: Applied Physics Letters, 2003, 83[12], 2456-8