Experiments were reported in which constant controlled levels of in-plane stress were applied in situ to oxidizing (111) Si substrates. Electron spin resonance measurements showed that the properties of inherently incorporated electrically active Pb defects at the (111)Si/SiO2 interface were affected; among others, tensile stresses decrease the number of Pb defects, while compressive stresses have the opposite effect. The results were in agreement with the generally accepted relationship between Pb-defect generation and interfacial mismatch (stress).

Influence of in situ Applied Stress during Thermal Oxidation of (111)Si on Pb Interface Defects. A.Stesmans, D.Pierreux, R.J.Jaccodine, M.T.Lin, T.J.Delph: Applied Physics Letters, 2003, 82[18], 3038-40