Epitaxial layers were grown, by liquid-phase epitaxy, onto 6H-SiC modified Lely crystals which contained a high density of micro-pipes and other defects. The configuration of the seed crystals was such that epitaxial layer growth occurred simultaneously on both faces of the seeds. Layers ranging from 20 to 30μm in thickness were deposited onto both faces, and X-ray diffraction, optical and scanning electron microscopy were used to investigate the layers. It was found that the dislocation and micro-pipe density in the substrate after liquid-phase epitaxial growth had been significantly reduced. Several micro-pipes were observed to decompose into non-hollow core dislocations. The growth center which was associated with micro-pipes generally reduced in size and shifted to new centers; due to decomposition of the micro-pipes. As a result, these new centers dominated the growing surfaces and made the healed micro-pipe completely invisible.

Healing Defects in SiC Wafers by Liquid-Phase Epitaxy in Si Melts. M.N.Khan, S.Nishizawa, K.Arai: Journal of Crystal Growth, 2003, 254[1-2], 137-43