Conventional transmission electron microscopy was used to determine the nature of crystallographic defects under some types of surface morphological fault formed on a 4H-SiC film which was grown homo-epitaxially onto a (00•1) off-cut substrate. So-called wavy-pit faults consisted of arrays of small surface cavities and half-loops of perfect dislocations, expanding towards the direction of their Burgers vector. So-called carrot and comet faults were accompanied by stacking faults. The geometry of crystallographic defects under surface faults was closely related to the off-cut direction of the substrate.

Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film. T.Okada, T.Kimoto, H.Noda, T.Ebisui, H.Matsunami, F.Inoko: Japanese Journal of Applied Physics - 1, 2002, 41[11A], 6320-6