A modified Ludeke model, which assumed that interfacial defect states were responsible for the formation of the Schottky barrier, was applied to the calculation of barrier heights in the systems: <Ag, Au>–<3C-, 6H-SiC>. Excellent agreement with experimental data was found. The calculations also showed that the concentration of Si vacancies which determined the barrier height depended only slightly upon the nature of the metal making the contact.

Role of Silicon Vacancies in Formation of Schottky Barriers at Ag and Au Contacts to 3C- and 6H-SiC. S.Y.Davydov, A.A.Lebedev, O.V.Posrednik, Y.M.Tairov: Semiconductors, 2002, 36[6], 652-4