The identification of vacancies on each of the 2 sub-lattices of SiC, was achieved by making use of electron irradiation, positron lifetime, coincident Doppler-broadening studies of positron-electron annihilation radiation and the comparison of experimental data and theory. After 0.3MeV electron irradiation, C vacancies (VC) were identified while, after 0.5MeV electron irradiation, predominantly Si vacancies (VSi) were observed. After 2.5MeV irradiation, divacancies (VSi–VSi) were detected. These results were

expected to be of general importance for the reliable identification of defects and atomic processes in complex solids.

Identification of Lattice Vacancies on the Two Sublattices of SiC. A.A.Rempel, W.Sprengel, K.Blaurock, K.J.Reichle, J.Major, H.E.Schaefer: Physical Review Letters, 2002, 89[18], 185501 (4pp)