The Si vacancy in its neutral charge state (VSi) was unambiguously identified in 4H- and 6H-SiC. This was achieved by the observation of ligand hyperfine interactions with the four C atoms in the nearest-neighbor shell and the twelve Si atoms in the next-nearest neighbor shell surrounding the vacancy. The complete hyperfine tensors were determined for the VSi0 center residing at all inequivalent lattice sites in the 2 polytypes. These were compared with parameters previously obtained for the negatively charged Si vacancy.

Ligand Hyperfine Interaction at the Neutral Silicon Vacancy in 4H- and 6H-SiC. M.Wagner, N.Q.Thinh, N.T.Son, W.M.Chen, E.Janzén, P.G.Baranov, E.N.Mokhov, C.Hallin, J.L.Lindström: Physical Review B, 2002, 66[15], 155214 (7pp)