The influence of stacking faults on the performance of 4H–SiC (11•0) Schottky barrier diodes fabricated on an epilayer, grown on a substrate which had been grown in the [11•0] direction by using the sublimation method, was investigated. The number of stacking faults under the Schottky electrode was determined by the KOH etching of (1¯1•0) face cross-sections. Stacking faults were found to have a strong influence on the leakage current of reverse characteristics and Schottky barrier height. The leakage current was increased even though a few stacking faults existed under the electrode. The Schottky barrier height was also affected by the stacking faults under the electrode.

Influence of Stacking Faults on the Performance of 4H–SiC Schottky Barrier Diodes Fabricated on the (11•0) Face. K.Kojima, T.Ohno, T.Fujimoto, M.Katsuno, N.Ohtani, J.Nishio, T.Suzuki, T.Tanaka, Y.Ishida, T.Takahashi, K.Arai: Applied Physics Letters, 2002, 81[16], 2974-6