The extension of stacking faults in a forward-biased 4H-SiC p-i-n diode, via the recombination-enhanced motion of leading partial dislocations, was investigated by means of optical emission microscopy. From the temperature dependence of the measured velocity of the partials, an activation energy of 0.27eV was obtained. Based upon this, and an analysis of the emission spectra, a radiative recombination level of 2.8eV for the stacking fault, and 2 energy levels for the partial dislocation (a radiative one at 1.8eV and a non-radiative at 2.2eV) were determined.

Recombination-Enhanced Extension of Stacking Faults in 4H-SiC p-i-n Diodes under Forward Bias. A.Galeckas, J.Linnros, P.Pirouz: Applied Physics Letters, 2002, 81[5], 883-5