Monocrystalline 3C–SiC layers were prepared by atmospheric-pressure chemical vapor deposition onto Si(111) substrates, using SiH4 and C3H8 gases at 1350 to 1400C. Atomic force microscopy and X-ray diffraction spectroscopy measurements revealed a marked dependence of surface morphology and layer quality on the C/Si ratio in the gas phase. In particular, 3 types of surface morphology were observed: rough, mirror-like and

pyramidal-defect covered. These were attributed to a lack of C, to C-limited growth and to stacking-fault generation, respectively.

Study of Surface Defects on 3C–SiC Films Grown on Si(111) by CVD. M.J.Hernández, G.Ferro, T.Chassagne, J.Dazord, Y.Monteil: Journal of Crystal Growth, 2003, 253[1-4], 95-101