A comparison was made of As diffusion in Si0.95Ge0.05 produced by epitaxy and ion beam synthesis using a 2 x 1016/cm2 Ge+ implant into Si. The As diffusion depth at 1025C in

the Si0.95Ge0.05 epitaxy sample was enhanced by a factor of 1.26 compared with a similar Si control sample and by a factor of 1.30 in the ion beam synthesized sample. The As diffusion in the Si0.95Ge0.05 epitaxy sample was modeled by increasing the As diffusion coefficient from the Si value of 1.92 x 10–15 to 5.15 x 10–15cm2/s, and in the ion beam synthesized sample by using the same diffusion coefficient of 5.15 x 10–15cm2/s and increasing the "plus one" factor in the transient enhanced diffusion model from 0.01 to 1.5. Arsenic diffusion in a Si sample implanted with 2 x 1015Si+/cm2 could be modeled using the same plus one factor of 1.5, thereby demonstrating the consistency of the modeling.

Comparison of Arsenic Diffusion in Si1–xGex Formed by Epitaxy and Ge+ Implantation. M.J.Mitchell, P.Ashburn, J.M.Bonar, P.L.F.Hemment: Journal of Applied Physics, 2003, 93[8], 4526-8