Conventional dopant diffusion techniques were successfully used to dope SiGe films deposited by ion-beam sputtering. The deposited a-SiGe films could be doped to both p- and n-type after B and P diffusion at 850 to 1000C. The doping process was accompanied by crystallization of the a-SiGe film. The electrical properties of the doped SiGe films were characterized by a 4-point probe and Hall measurements. Hall mobilities as high as 13 and 31cm2/Vs were obtained in B- and P-doped polycrystalline SiGe films, respectively.

Boron and Phosphorous Diffusion in Ion-Beam-Sputtering Deposited SiGe Films. G.P.Ru, X.P.Qu, Q.Gu, W.J.Qi, B.Z.Li: Materials Letters, 2002, 57[4], 921-4