The dislocation density in thin SiGe on Insulator layers was evaluated, for the first time, by the enhanced Secco etching method. It was found that the dislocation density in SGOI layers formed by the Ge condensation method was 6 x 103/cm2. It was also confirmed that the different types of defects were observed by the HF defect detection method. In addition, the origin of dislocations was discussed by the diagnosis of the variation of dislocation densities during the process steps in the Ge condensation technique.

Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method. N.Sugiyama, Y.Moriyama, T.Tezuka, T.Mizuno, S.Nakaharai, K.Usuda, S.Takagi: Japanese Journal of Applied Physics - 1, 2003, 42[7A], 4476-9