Electronic properties of the vacancy–O complex in unstrained Si1–xGex crystals (x = 0 to 0.055) grown by the Czochralski method were studied by means of capacitance transient techniques. The enthalpy of electron ionization for the single acceptor level of the defect relative to the conduction band edge, ΔHn, was found to increase from 0.16 to 0.19eV with the increase in Ge content. The change of the lattice parameter in Si1–xGex alloys was argued to be one of the main reasons of the observed ΔHn change.

Vacancy–Oxygen Complex in Si1–xGex Crystals. V.P.Markevich, A.R.Peaker, L.I.Murin, N.V.Abrosimov: Applied Physics Letters, 2003, 82[16], 2652-4