Mechanisms of misfit dislocation generation as well as peculiarities of dislocation structure formation in Si0.7Ge0.3/Si multi-layer heterostructures grown by molecular beam epitaxy with low-temperature SiGe and (SiGe + Si) buffer layers were studied. Full strain relaxation in the heterostructures with 200 to 250nm thick buffer layers was achieved. In the heterostructures with both types of low-temperature layer, misfit dislocation generation was found to proceed similarly to heterostructure growth at high temperatures; however, the rate of dislocation nucleation was higher due to the high vacancy concentration near the interface. Threading dislocations, which were not connected with misfit dislocation network, were generated in the epitaxial layers apart from tDislocation Structure Formation in SiGe/Si(001) Heterostructures with Low-Temperature Buffer Layers. V.I.Vdovin, M.Mühlberger, M.M.Rzaev, F.Schäffler, T.G.Yugova: Journal of Physics - Condensed Matter, 2002, 14[48], 13313-8