Hydrogen concentration and diffusion in silicon nitride thin film was of significant interest because of its importance in barrier, sensor and catalytic coating applications. A novel method based upon potential–pH response measurement was here used to determine H diffusion in silicon nitride thin films. Hydrogen diffusion coefficient of silicon nitride films obtained from this method was 10-19cm2/s. The unique feature of the potential–pH response method was its relatively simple experimental procedure, which eliminates complications arising from surface related effects and/or presence of H traps in the metal. The method also offers a considerable reduction in test time.

Hydrogen Diffusion Coefficient of Silicon Nitride Thin Films. G.C.Yu, S.K.Yen: Applied Surface Science, 2002, 201[1-4], 204-7