Micro-twins in semi-metal TmP epilayers grown on (001) GaAs substrates by molecular beam epitaxy were studied by transmission electron microscopy. Selected-area diffraction patterns exhibited extra spots along <111> and <224> corresponding to three times the normal rock-salt periodicity. Only one or two twin variants were found in the crystal. The occurrence of the observed micro-twins in the TmP-GaAs heterostructure could be accounted for by the growth-accident mechanism, i.e., the formation of micro-twins was via growth accidents in the stacking sequence on {111} and {112} planes. The growth accidents appear to occur due to rapid growth rates and/or contamination.

Formation of Microtwins in TmP/GaAs Heterostructures. C.H.Lin, R.J.Hwu, L.P.Sadwick: Journal of Crystal Growth, 2003, 247[1-2], 77-83