Impurity photoconductivity and temperature-dependent Hall effect measurements were used to assess the ionization energies of acceptor levels produced in undoped and Te-doped ZnAs2 single crystals by structural defects: εa(1-4) = 0.08, 0.14, 0.26 and 0.34eV. The nature of the structural defects responsible for these acceptor levels was considered.

Energy Levels of Structural Defects in ZnAs2. V.A.Morozova, S.F.Marenkin, O.G.Koshelev: Inorganic Materials, 2002, 38[4], 325-30