The transformation of Shockley partial dislocations into Frank partial dislocations in lattice-matched ZnS0.04Se0.96/GaAs(001) was investigated by means of transmission electron microscopy. The ZnS0.04Se0.96 layers, with a nominal thickness of 70nm, were grown onto GaAs(001) via metal-organic chemical vapour deposition at 350C. The main features were stacking-fault pairs on (111), and planes that were bounded by Shockley partial dislocations. Various reactions between partial dislocations were observed to take place in situ in the electron microscope, leading to the transformation of Shockley partial dislocations into Frank partial dislocations.

Transformation of Shockley into Frank Stacking Faults in a ZnS0.04Se0.96/GaAs (001) Heterostructures. D.Litvinov, A.Rosenauer, D.Gerthsen: Philosophical Magazine Letters, 2003, 83[9], 575-81