A systematic study was made of the native stacking fault density in ZnSe/GaAs(001) heterostructures using several proposed interface fabrication procedures. Only 2 of the procedures reproducibly led to stacking-fault densities below 104/cm2. Despite the apparent differences, the 2 procedures were found to yield quantitatively similar defect densities, and qualitatively similar interface compositions and band alignments.

Controlling the Native Stacking Fault Density in II-VI/III-V Heterostructures. A.Colli, E.Pelucchi, A.Franciosi: Applied Physics Letters, 2003, 83[1], 81-3