Models for the description of B-regime and C-regime grain-boundary diffusion in thin polycrystalline films which were subjected to a stress field were reviewed. A new model was proposed here which described grain boundary diffusion under stress, in the C-regime, for the case of a finite surface source which was in contact with the diffusant. Analytical solutions were obtained for the source and sink surface kinetics.

Models for Grain Boundary Diffusion in Thin Films under Stress Fields in Different Kinetic Regimes. A.Ostrovsky, N.Balandina, B.Bokstein: Materials Science Forum, 1999, 294-296, 553-6