Transient effects on diffusion and activation during post-implantation anneals were a major obstacle for the further miniaturization of ultra-large-scale integrated semiconductor devices. Recent developments in the simulation of such phenomena were reviewed, with particular emphasis on models for the kinetics of self-interstitial agglomerates and B-interstitial clusters.

Transient-Diffusion Effects. D.Stiebel, P.Pichler: Applied Physics A, 2003, 76[7], 1041-8