A comparative study was made of the unit-cell parameters, a and c, and volume, V, of chalcopyrite-related In- and Ga-rich ordered defect compounds of the ternary systems: Cu-In-Se, Cu-In-Te, Cu-Ga-Se and Cu-Ga-Te. It was observed that these parameters decreased in the sequence: 1:1:2 → 3:5:9 → 5:9:16 → 2:4:7 → 1:3:5 → 1:5:8. This was attributed to the presence of arrays of ordered defects in the crystal lattices of these compounds. It was also found that the values of a, c and V in these systems varied linearly with the fraction of [2VCu-1 + (In,Ga)Cu+2] defect pairs for each unit of Cu(In,Ga)(Se2,Te2).

Effect of Ordered Arrays of Native Defects on the Crystal Structure of In- and Ga-Rich Cu-Ternaries. C.Rincón, S.M.Wasim, G.Marín, J.M.Delgado, J.Contreras: Applied Physics Letters, 2003, 83[7], 1328-30