A review was presented of knowledge concerning defects in IV-VI (PbTe), II-VI (CdTe) and III-V (GaAs, InP) crystals, as a function of non-stoichiometric growth from the melt.

This covered information concerning phase relationships (such as the shape of the existence region versus stoichiometry). Non stoichiometry-related melt growth phenomena were included. Selected intrinsic point defects, and their effect upon impurity incorporation as a function of the deviation from stoichiometry, were considered. Interactions between native point defects and dislocation formation were touched upon.

Non-Stoichiometry Related Defects at the Melt Growth of Semiconductor Compound Crystals – a Review. P.Rudolph: Crystal Research and Technology, 2003, 38[7-8], 542-4