The interference between the elastic phonon scatterings by bound electrons and donor point defects in semiconductors was studied in two cases. First when the electron and the donor point defect belong to the same site in the approximation of isolated impurity. Second when they were at different sites assuming the impurity atoms to be distributed around the origin with a mean-square radius. In both cases contribution of such interference to the relaxation rate became vanishingly small. That is, Matthiessen’s rule was obeyed.

Interference between the Elastic Phonon Scatterings by Bound Electrons and Point Defects. B.K.Singh, V.J.Menon, K.C.Sood: Physica B, 2002, 322[1-2], 140-5