Cluster ion implantation using decaborane (B10H14) was proposed as a shallow implantation technique for LSI devices with gate lengths of several-tens nanometers. Experiments and computer simulations of low-energy B monomers and decaborane clusters implantation were performed. Molecular dynamics simulations of B10 cluster implantation have shown similar implant depth but different damage density and damage structure compared to monomer (B1) ion implantation with the same energy-per-atom. For monomer implantation, point-defects such as vacancy–interstitial pairs were mainly formed. On the other hand, B10 generates large numbers of defects within a highly-amorphized region at the impact location. This difference in damage structure produced during implantation was expected to cause different annihilation processes.

Defect Characteristics by Boron Cluster Ion Implantation. T.Aoki, J.Matsuo, G.Takaoka, N.Toyoda, I.Yamada: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 855-60