A mechanism of the recombination-stimulated growth of a coupled interstitial–vacancy disk in a semiconductor featuring intensive generation and localization of electron–hole pairs was proposed. An expression was obtained for the growth rate of the dislocation loop as a function of the laser radiation intensity and the medium temperature.

Recombination-Stimulated Growth of a Dislocation Loop under Conditions of Intense Laser-Induced Electron–Hole Pair Production. V.I.Emelyanov, A.V.Rogacheva: Technical Physics Letters, 2002, 28[6], 486-8