The heterogeneous string model for a twist disclination, which was an extended defect of rotational type, was considered. Within the framework of this model, the contribution of twist disclinations to the specific heat and internal friction of disordered semiconductors was calculated.

The Influence of Twist Disclinations on the Specific Heat and Internal Friction of Disordered Semiconductors. D.V.Churochkin, V.A.Osipov: Journal of Physics - Condensed Matter, 2002, 14[48], 12917-22