The Alexander–Haasen theory of deformation in semiconductor crystals having a low dislocation density was generalized by taking account of the effect of dynamic aging of dislocations, caused by impurity drag. The generalized theory explained some qualitative differences between the elastic–plastic transition in Czochralski-grown Si crystals and that in higher-purity crystals. In particular, this was related to the dependence of the height of the yield-point peak upon the initial dislocation density and weakening of the strain-rate sensitivity of the yield stress.

Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors. B.V.Petukhov: Semiconductors, 2002, 36[2], 121-5