The classical logarithmic potential of a charged dislocation which was widely used in the analysis of electrical and optical properties, determination of dislocation-associated levels, etc, could be significantly modified due to, among other effects, the deformation potential of the strain field as well as to the graininess of the screening charge cloud as long as it consisted of shallow impurities. In general, this reduced the effective potential barrier to carrier recombination, the activation energy for thermal emission of trapped non-equilibrium carriers from core states, and also the optical excitation energies for transitions from the core into free band states. General rules concerning the relative importance of these effects were established.

The True Potentials and Transition Barriers at Dislocations. R.Labusch: Journal of Physics - Condensed Matter, 2002, 14[48], 12801-11