Thin diffusion layers (5-100nm) in semiconductors could be introduced by electron beam doping. In this technique, an evaporate film or impurity layer was irradiated with an electron beam to induce super-diffusion into the underlying semiconductor substrate. In this study, 2- and 3-layer structures were examined without annealing, and the electron-beam doping of P, B, N and Al into Si, diamond and SiC substrates was investigated.

Electron Beam Doping of Impurity Atoms into Semiconductors by Superdiffusion. T.Wada, H.Fujimoto: Physica Status Solidi C, 2003, 0[2], 788-94