The effect of previous low dose (103 rad) γ-irradiation on the annealing temperature of the radiation-induced defects in ion-implanted MOS samples was studied by using the thermally stimulated current method. Here, two groups of samples (firstly without any additional treatment and, secondly, γ-irradiated after oxidation) were used. Then, both groups were implanted through the oxide with B ions with energy 15keV and dose of 1.2 x 1012/cm2. Thermal treating of the samples at different temperature was carried out. Full thermal annealing of the radiation defects introduced by ion implantation in the samples from the first group was observed after 0.25h annealing at 700C. It was shown that γ-irradiation led to a lowering of the annealing temperature after 0.25h annealing at 500C. TSC spectra of the double treated samples were not observed.

Effect of Low Dose γ-Radiation on the Annealing Temperature of Radiation Defects in Ion Implanted MOS Structures. S.Kaschieva, S.Alexandrova: Materials Science and Engineering B, 2002, 95[3], 295-8