The redistribution of the elements as a result of atomic relocations produced by the ions and the recoils due to the ballistic and transport processes was investigated by using dynamic Monte Carlo methods. Phenomena, such as radiation-enhanced diffusion and bombardment-induced segregation triggered by the ion bombardment may also contribute to the migration of atoms within the target. In order to include both radiation-enhanced diffusion and bombardment-induced segregation, an approach was suggested which was considered to be an extension of the binary collision approximation, i.e. it takes place "simultaneously" with the cascade and acted as a correction to the particle redistribution for low energies. Both radiation-enhanced diffusion and bombardment-induced segregation models were based upon the common approach to treat the transport processes as a result of a random migration of point defects (vacancies and interstitials) according to a probability given by a pre-defined Gaussian. The models were tested and the influence of the diffusion and segregation was illustrated in the cases of 12keV 121Sb+ implantation at low fluence in SiO2/Si substrate and of self-sputtering of Ga+ ions during profiling of SiO2/Si interfaces.

Non-Thermodynamic Approach to Including Bombardment-Induced Post-Cascade Redistribution of Point Defects in Dynamic Monte Carlo Code. V.A.Ignatova, I.R.Chakarov, I.V.Katardjiev: Nuclear Instruments and Methods in Physics Research B, 2003, 202, 24-30