The diffusion of H (D) into various kinds of single crystals (defect-free, B-doped, defect-containing) was studied by using electrical (Hall-effect) and secondary ion mass spectroscopy measurements. The H was incorporated into the samples from a microwave H (D) plasma at 820K. Post-diffusion annealing was also performed, when required, up to 1700K. The defects were introduced by ion implantation, or unintentionally during homo-epitaxial microwave chemical vapor deposition growth of the diamond layer. The diffusion profile of H was found to be affected by the presence of dopants and defects (impurities as well as native defects). The diffusion of H was already observed at 850K in B-doped or defect-containing diamonds. This result contrasted with the case where H was implanted into a B implantation-doped diamond layer in which only a slight diffusion of H was observed above 1200K. The electrical characteristics of the initially B doped layer were found to deteriorate or to be improved by the diffusion of H; depending upon the characteristics of the B-doped layer.

Diffusion of Hydrogen from a Microwave Plasma into Diamond and its Interaction with Dopants and Defects. C.Uzan-Saguy, C.Cytermann, B.Fizgeer, V.Richter, Y.Avigal, M.Shaanan, R.Brener, R.Kalish, E.Bustarret, J.Chevallier: Diamond and Related Materials, 2002, 11[3-6], 316-22