Chemical vapour deposited polycrystalline layers were deposited by using a gas mixture (CH4+D2), and a D concentration of 3 x 1019/cm3 (originating from the vector gas) was found in the as-grown samples. Samples were first annealed at 1200C, exposed to a D microwave or radio-frequency plasma, and the D diffusion profiles analyzed. The profiles were explained in term of trapping on plasma-induced defects near to the surface and trapping on inter- and intragranular defects in the bulk. The mean free paths of D were calculated by fitting the D diffusion profiles and were compared with the grain sizes.

SIMS Analysis of Hydrogen Diffusion and Trapping in CVD Polycrystalline Diamond. F.Jomard, D.Ballutaud: Applied Surface Science, 2003, 203-204, 478-81

Figure 1

Diffusion of Vacancies in Diamond