By using ab initio calculations, low-loss and core-excitation electron energy-loss spectra obtained from various dislocation cores were modelled and the results were compared with bulk spectra. The 90° partial glide, undissociated 60° shuffle and 30° partial dislocations in particular were considered. Evidence was found for empty states that were localized on shuffle dislocation cores and were positioned below the bulk band-edge, which modified the electron energy-loss spectrum.

Modelling Electron Energy-Loss Spectra of Dislocations in Silicon and Diamond. C.J.Fall, J.P.G.Goss, R.Jones, P.R.Briddon, A.T.Blumenau, T.Frauenheim: Physica B, 2001, 308-310, 577-80