Density-functional based calculations were used to investigate the low-energy core structures of 90º partial dislocations in diamond and 3C-SiC. In both materials dislocation glide was analyzed in terms of kink formation and migration and the fundamental steps to kink migration were investigated. It was found that the C-terminated core structure in SiC was more mobile than the Si core. However, the Si partial was electrically active and this opens the possibility of recombination-enhanced glide under ionizing conditions or an enhanced mobility in doped material.

Straight and Kinked 90° Partial Dislocations in Diamond and 3C-SiC. A.T.Blumenau, C.J.Fall, R.Jones, M.I.Heggie, P.R.Briddon, T.Frauenheim, S.Öberg: Journal of Physics - Condensed Matter, 2002, 14[48], 12741-7

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