It was noted that the volume change and piezospectroscopic tensors of defects in semiconductors provided a direct link between experiment and modelling techniques. Predictions were made of these quantities for the single, di-, tri-, and tetra-interstitial defects in diamond, in order to aid their identification.

Stress Tensors and Dilatation of Interstitial Defects in Diamond. J.P.Goss, R.Jones, P.R.Briddon: Physical Review B, 2002, 65[3], 035203 (8pp)